標題: Wet mesa etching process in InGaN-based light emitting diodes
作者: Yang, Chung-Chieh
Lin, Chia-Feng
Jiang, Ren-Hao
Liu, Hsun-Chih
Lin, Chun-Min
Chang, Chung-Ying
Wuu, Dong-Sing
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 2008
摘要: A photoelectrochemical wet mesa etching (WME) process was used to fabricate InGaN-based light emitting diodes (LEDs) as a substitute for the conventional plasma mesa dry etching process. The p-type GaN:Mg layer, InGaN active layer, and n-type GaN:Si layer were etched through a sequential photoelectrochemical oxidation and oxide-removing process to define the mesa region. The higher lateral wet-etching rate (similar to 3.4 mu m/h) of the InGaN active layer was observed to form a wider undercut structure which has 42.7% light output power enhancement compared to a conventional LED fabricated with the plasma dry etching process. The reverse current of a WME-LED was suppressed by avoiding plasma damage during the dry mesa etching process. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9924
http://dx.doi.org/10.1149/1.2908196
ISSN: 1099-0062
DOI: 10.1149/1.2908196
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 11
Issue: 7
起始頁: H169
結束頁: H172
Appears in Collections:Articles