標題: | Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer |
作者: | Lin, Chao-Cheng Chang, Ting-Chang Tu, Chun-Hao Chen, Wei-Ren Hu, Chih-Wei Sze, Simon M. Chang, Chun-Yen Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2008 |
摘要: | In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo-Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level "0" and "1" for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes. (C) 2008 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/9926 http://dx.doi.org/10.1149/1.2919709 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.2919709 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 11 |
Issue: | 7 |
起始頁: | H202 |
結束頁: | H203 |
顯示於類別: | 期刊論文 |