標題: Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layer
作者: Lin, Chao-Cheng
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Wei-Ren
Hu, Chih-Wei
Sze, Simon M.
Chang, Chun-Yen
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo-Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level "0" and "1" for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9926
http://dx.doi.org/10.1149/1.2919709
ISSN: 1099-0062
DOI: 10.1149/1.2919709
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 11
Issue: 7
起始頁: H202
結束頁: H203
顯示於類別:期刊論文