标题: 半极性与非极性氮化镓之宽能隙材料及光电元件研究-子计画一:半极性与非极性氮化镓半导体材料元件磊晶成长
Epitaxy Growth of Semi-Polar and Non-Polar GaN Materials and Devices
作者: 郭浩中
Kuo Hao-Chung
国立交通大学光电工程学系(所)
关键字: 有机金属化学气相沉积;矽基板;发光二极体;Metalorganic chemical vapor deposition;Si substrate;Light emitting diode.
公开日期: 2011
摘要: 非极性和半极性氮化镓半导体由于在成长方向上不具内建电场,因此在能带结构上具平带特性可使电子、电洞波函數在空间中复合机率高,因此在理論上发光效率可以比传统具极性之发光元件还來得高,故在利用其制作高效率发光元件上极具潜力。此外由于非极性和半极性三族氮化物具相当强的偏振光特性,故在光性应用上十分广泛。本计画主要目的为成长高品质非极性和半极性三族氮化物相关材料及元件。利用有机金属气相沈积系统成长非极性和半极性发光二极体并以降低螺旋差排及叠差密度为首要目标,主要利用之技术如利用非极性氮化镓模板上制作奈米柱,再利用侧向成长的方式制作出高品质磊晶层、调整适当之磊晶參數和磊晶结构优化,以增加元件之发光性能,并制作出偏光效率良好之元件。另外在制程方面,计划运用了基板图案化后再成长高品质非极性和半极性氮化镓磊晶层。再者,我们可以运用布拉格反射结构于非极性或半极性面射型雷射之共振腔结构中,再藉由本研究室暨有的光学和电学设备进行量测、分析非极性或半极性面射型雷射之高效能元件及物理特性。
Unlike conventional c-plane devices, non-polar and semi-polar III-nitride semiconductor materials are free of polarization related electric fields along the growth direction. In theory, the emission efficiency of non-polar and semi-polar devices would be better than that of c-plane devices. In addition, due to the anisotropic structure, non-polar and semi-polar devices have much potential in optical applications. Epitaxial growth method of devices related to non-polar and semi-polar GaN with high quality was proposed in this project. With the goal of achieving the low threading dislocations and stacking faults density, the high efficient non-polar and semi-polar light emitting diodes would be grown by Metal-Organic Chemical-Vapor Deposition (MOCVD). Main techniques include epitaxially lateral over growth by nanowire on non-polar GaN template, suitable epitaxial parameters and optimization epitaxial structure. For process, patterned sapphire would be proposed to non-polar and semi-polar GaN with high quality. Furthermore, distributed bragger reflector (DBR) structure could be used to application of non-polar and semi-polar vertical cavity surface emitting laser (VCSEL). Combining with optical and electrical measurement instrument, the high efficient performances and physical characteristics of non-polar and semi-polar VCSEL would be measured and identified.
官方说明文件#: NSC99-2221-E009-032-MY3
URI: http://hdl.handle.net/11536/99260
https://www.grb.gov.tw/search/planDetail?id=2216199&docId=354785
显示于类别:Research Plans