完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Zan, Hsiao-Wen | en_US |
dc.contributor.author | Yen, Kuo-Hsi | en_US |
dc.date.accessioned | 2014-12-08T15:12:52Z | - |
dc.date.available | 2014-12-08T15:12:52Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/9927 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/1.2936224 | en_US |
dc.description.abstract | A simple UV-treatment process for poly(methyl methacrylate) (PMMA) dielectric is proposed to enhance photoresponsivity of pentacene-based organic thin-film transistors. The UV treatment creates excess negatively charged sites on the PMMA dielectric, which makes the device exhibit a large photoinduced current and prolongs persistent conductance recovery. In order to describe time-dependent photoinduced current, double-time constant equations are proposed. Based on time-constant fittings, slow-varied responses are found to be influenced by the UV treatment. The rapid-varied response is independent of gate bias and UV treatment. A plausible model for spatial carrier distribution is discussed and proposed to describe this observed phenomenon. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.2936224 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 11 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | H222 | en_US |
dc.citation.epage | H225 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 顯示科技研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of Display | en_US |
dc.identifier.wosnumber | WOS:000256706100023 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |