完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 張翼 | en_US |
dc.contributor.author | CHANG EDWARD YI | en_US |
dc.date.accessioned | 2014-12-13T10:42:38Z | - |
dc.date.available | 2014-12-13T10:42:38Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.govdoc | NSC102-2911-I009-302 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/99284 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=2848992&docId=403199 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | CMOS 積體電路 | zh_TW |
dc.subject | 矽及化合物半導體異質整合 | zh_TW |
dc.subject | 變異性 | zh_TW |
dc.subject | 可靠性 | zh_TW |
dc.subject | 鰭式電晶體 | zh_TW |
dc.subject | 應變技術 | zh_TW |
dc.subject | 元件模型 | zh_TW |
dc.subject | CMOS integrated circuits | en_US |
dc.subject | heterogeneous integration of III-V and silicon | en_US |
dc.subject | variability | en_US |
dc.subject | FinFET transistor | en_US |
dc.subject | strain technique | en_US |
dc.subject | device modeling | en_US |
dc.title | 跨國頂尖研究中心---國際頂尖異質整合綠色電子研究中心(1/5) | zh_TW |
dc.title | International Center of Excellence for Advanced Heterogeneous Integration for Green Electronics Research (1/5) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學材料科學與工程學系(所) | zh_TW |
顯示於類別: | 研究計畫 |