標題: Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs
作者: Chiu, C. H.
Lee, C. E.
Chao, C. L.
Cheng, B. S.
Huang, H. W.
Kuo, H. C.
Lu, T. C.
Wang, S. C.
Kuo, W. L.
Hsiao, C. S.
Chen, S. Y.
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
公開日期: 2008
摘要: Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface. (C) 2008 The Electrochemical Society.
URI: http://hdl.handle.net/11536/9928
http://dx.doi.org/10.1149/1.2837644
ISSN: 1099-0062
DOI: 10.1149/1.2837644
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 11
Issue: 4
起始頁: H84
結束頁: H87
Appears in Collections:Articles