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dc.contributor.authorWu, Yew Chung Sermonen_US
dc.contributor.authorHuang, Ping-Weien_US
dc.date.accessioned2014-12-08T15:12:53Z-
dc.date.available2014-12-08T15:12:53Z-
dc.date.issued2008en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/9930-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2977761en_US
dc.description.abstractThe effect of Ni thin film on the reflectivity of the indium tin oxide (ITO)/Ag mirror of GaN light-emitting diodes after annealing at 200 degrees C was investigated. Samples designated as "ITO/Ag" were ITO/Ag films without a Ni layer. "ITO/Ni/Ag" and "ITO/Ag/Ni" were ITO/Ag films with a Ni layer either between the ITO and Ag films, or on the back side of Ag film. "ITO/Ni/Ag/Ni" were ITO/Ag films with Ni layers on both sides of Ag film. It was found that annealed ITO/Ni/Ag/Ni had the highest reflectivity (96.3%) because two Ni layers can retard the agglomeration of Ag and the in-diffusion of Ag into ITO.en_US
dc.language.isoen_USen_US
dc.titleEffect of Ni thin film on the reflectivity of ITO/Ag mirrors of GaN light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2977761en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue11en_US
dc.citation.spageJ82en_US
dc.citation.epageJ84en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000259188600027-
dc.citation.woscount1-
Appears in Collections:Articles