Effect of Ni thin film on the reflectivity of ITO/Ag mirrors of GaN light-emitting diodes

doi:10.1149/1.2977761

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Yew Chung Sermon	en_US
dc.contributor.author	Huang, Ping-Wei	en_US
dc.date.accessioned	2014-12-08T15:12:53Z	-
dc.date.available	2014-12-08T15:12:53Z	-
dc.date.issued	2008	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9930	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.2977761	en_US
dc.description.abstract	The effect of Ni thin film on the reflectivity of the indium tin oxide (ITO)/Ag mirror of GaN light-emitting diodes after annealing at 200 degrees C was investigated. Samples designated as "ITO/Ag" were ITO/Ag films without a Ni layer. "ITO/Ni/Ag" and "ITO/Ag/Ni" were ITO/Ag films with a Ni layer either between the ITO and Ag films, or on the back side of Ag film. "ITO/Ni/Ag/Ni" were ITO/Ag films with Ni layers on both sides of Ag film. It was found that annealed ITO/Ni/Ag/Ni had the highest reflectivity (96.3%) because two Ni layers can retard the agglomeration of Ag and the in-diffusion of Ag into ITO.	en_US
dc.language.iso	en_US	en_US
dc.title	Effect of Ni thin film on the reflectivity of ITO/Ag mirrors of GaN light-emitting diodes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.2977761	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	11	en_US
dc.citation.issue	11	en_US
dc.citation.spage	J82	en_US
dc.citation.epage	J84	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000259188600027	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文