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dc.contributor.authorGao, Zhi Qiangen_US
dc.contributor.authorMi, Bao Xiuen_US
dc.contributor.authorXu, Gui Zhenen_US
dc.contributor.authorWan, Yi Qianen_US
dc.contributor.authorGong, Meng Lianen_US
dc.contributor.authorCheah, Kok Waien_US
dc.contributor.authorChen, Chin H.en_US
dc.date.accessioned2014-12-08T15:12:53Z-
dc.date.available2014-12-08T15:12:53Z-
dc.date.issued2008en_US
dc.identifier.issn1359-7345en_US
dc.identifier.urihttp://hdl.handle.net/11536/9938-
dc.identifier.urihttp://dx.doi.org/10.1039/b713566aen_US
dc.description.abstractTo overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.en_US
dc.language.isoen_USen_US
dc.titleAn organic p-type dopant with high thermal stability for an organic semiconductoren_US
dc.typeArticleen_US
dc.identifier.doi10.1039/b713566aen_US
dc.identifier.journalCHEMICAL COMMUNICATIONSen_US
dc.citation.issue1en_US
dc.citation.spage117en_US
dc.citation.epage119en_US
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000251633000027-
dc.citation.woscount30-
Appears in Collections:Articles


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