An organic p-type dopant with high thermal stability for an organic semiconductor

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Gao, Zhi Qiang	en_US
dc.contributor.author	Mi, Bao Xiu	en_US
dc.contributor.author	Xu, Gui Zhen	en_US
dc.contributor.author	Wan, Yi Qian	en_US
dc.contributor.author	Gong, Meng Lian	en_US
dc.contributor.author	Cheah, Kok Wai	en_US
dc.contributor.author	Chen, Chin H.	en_US
dc.date.accessioned	2014-12-08T15:12:53Z	-
dc.date.available	2014-12-08T15:12:53Z	-
dc.date.issued	2008	en_US
dc.identifier.issn	1359-7345	en_US
dc.identifier.uri	http://hdl.handle.net/11536/9938	-
dc.identifier.uri	http://dx.doi.org/10.1039/b713566a	en_US
dc.description.abstract	To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8-hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.	en_US
dc.language.iso	en_US	en_US
dc.title	An organic p-type dopant with high thermal stability for an organic semiconductor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1039/b713566a	en_US
dc.identifier.journal	CHEMICAL COMMUNICATIONS	en_US
dc.citation.issue	1	en_US
dc.citation.spage	117	en_US
dc.citation.epage	119	en_US
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000251633000027	-
dc.citation.woscount	30	-
顯示於類別：	期刊論文

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