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dc.contributor.authorWu, Tzung-Hanen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:12:55Z-
dc.date.available2014-12-08T15:12:55Z-
dc.date.issued2008-01-01en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.23048en_US
dc.identifier.urihttp://hdl.handle.net/11536/9962-
dc.description.abstractA GaInP/GaAs HBT broadband RF front-end consisting of a low-noise wideband amplifier and a micromixer is demonstrated in this article. The major advantage of this work is the elimination of inductors and thus the chip area can be greatly saved. The bandwidth of the RF front-end is up to 7 GHz. The measured conversion gain is higher than 25 dB from 1 to 7 GHz and the noise figure of the RF front-end is less than 8 dB within the bandwidth. (c) 2007 Wiley Periodicals, Inc.en_US
dc.language.isoen_USen_US
dc.subjectGaInP/GaAs HBTen_US
dc.subjectwideband amplifieren_US
dc.subjectmicromixeren_US
dc.subjectGilbert mixeren_US
dc.titleGaInP/GaAs HB broadband inductorless receiveren_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.23048en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume50en_US
dc.citation.issue1en_US
dc.citation.spage247en_US
dc.citation.epage250en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000251856500074-
dc.citation.woscount0-
Appears in Collections:Articles


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