以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發

Full metadata record

DC Field	Value	Language
dc.contributor.author	徐文祥	en_US
dc.contributor.author	HSU WENSYANG	en_US
dc.date.accessioned	2014-12-13T10:43:18Z	-
dc.date.available	2014-12-13T10:43:18Z	-
dc.date.issued	2011	en_US
dc.identifier.govdoc	NSC100-2221-E009-034	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/99658	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=2328558&docId=365245	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	感應耦合電漿	zh_TW
dc.subject	乾蝕刻	zh_TW
dc.subject	高分子	zh_TW
dc.subject	保護層	zh_TW
dc.subject	懸浮	zh_TW
dc.subject	單晶矽	zh_TW
dc.subject	ICP	en_US
dc.subject	dry etching	en_US
dc.subject	polymer	en_US
dc.subject	passivation	en_US
dc.subject	suspended	en_US
dc.subject	SCS	en_US
dc.title	以高分子作為感應偶合電漿反應離子蝕刻側壁保護層以製作單晶矽懸浮微結構之快速製程平台研發	zh_TW
dc.title	Development a Rapid Fabrication Platform for Suspended Single-Crystal-Silicon Microstructures by Icp-Rie with Polymer as Side-Wall Protection Layer	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學機械工程學系（所）	zh_TW
Appears in Collections:	Research Plans

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