半極性與非極性氮化鎵之寬能隙材料及光電元件研究---總計畫

Abstract

面對未來能源短缺與環保意識日益高漲的衝擊，零污染而省電的半導體光電元件可說是同時解決上述兩問題的最佳選擇。因此，計畫係一跨領域、跨校之整合性研究計畫，本整合計畫整合了寬能隙光電半導體材料之研發、奈米材料之研製、奈米微結構及奈米表面等製程技術、光電新穎光子晶體元件結構特性模擬計算與製作、以及製作新穎元件技術等各領域技術，利用非極性及半極性基板與新穎製程設計與研發寬能隙III族氮化物高量子效率之光電材料、結構與發光元件，如：高品質之發光異質結構（Heterostrcture）、非極性寬能隙材料及元件之成長與特性分析、非極性高效率寬能隙材料發光元件或雷射結構之設計、成長與製作，以及具有光學微共振腔結構之寬能隙發光元件，低維結構之製作等。為使計畫目標能順利達成，本計畫擬分成以下五個子計畫來進行： 子計劃一：半極性與非極性氮化鎵半導體材料元件磊晶成長； 子計劃二：半極性或非極性氮化鎵新穎奈米光子元件之研究； 子計劃三：以非極性及半極性氮化鎵為基底之光微機電結構； 子計劃四：半極性與非極性氮化鎵微奈米結構與高功率發光元件之研究； 子計畫五：非極性及半極性氮化鎵材料特性及奈米元件發光特性之數值分析研究。 其中子計畫一係有關改善光電元件主體材料品質的研究；子計畫二和四是關於光電元件之開發；子計畫三則是開發具高反射率的空氣/半導體分佈式布拉格反射鏡結構，可以做為光電元件的一個應用平台，藉以進一步與發光二極體、面射型雷射整合，形成一低閾値、高效率的發光元件。針對利用上述所完成的結果進行高功率發光元件之研發；子計畫五系利用數值方法分析非極性及半極性氮化鎵之寬能隙元件發光特性。

In face of the impacts of energy shortage and the rising environmental consciousness, semiconductor optoelectronic devices, being completely clean and saving electricity, can be considered as the best choice for solving the above two problems at the same time. Therefore, the proposed research is an interdisciplinary research of a joint effort among epitaxy growth development of novel and nano optoelectronic materials, development of novel fabrication techniques including nano-scaled surface and nanorod, devices performance simulation, fabrication and characteristics of photonic crystal nanocavity light emitting devices, and fabrication of novel devices. The purpose of the proposal is to design and develop the high efficient non-polar and semi-polar wide bandgap III-nitride optoelectronic materials and devices by using novel techniques, for example, the epitaxy of high quality wide bandgap hetero-structure, growth of non-polar wide bandgap materials and devices, design and fabrication of non-polar light emitting devices and laser devices, and fabrication of low dimensional structure, and nanocavity or micro-cavity lght emitting devices. We have a lot of research efforts on fabrication process and optical measurement of III-Nitride-based photonic device already. Therefore we have potential to develop and research on this project, and we will hold some conferences in conjunction with the Quantum Electronics, novel material research and device fabrication technology. We also cooperate with related international research institutions. To achieve the final goal smoothly, we divided our plan into five subplans. Subplans 1 is concerned with the studies on the improvements of the optoelectronic devices main material qualities; while subplans 2 and 4 is related to the development of semi-polar and non-polar GaN optoelectronic devices. Subplan 3 is related to the fabrication of high-reflectance air/semiconductor DBR structure. The air-gap DBR pairs can thus be fabricated and integrated into light-emitting diodes and vertical cavity lasers. Finally, Subplan 5 is analyzed the properties of non-polar and semi-polar wide bandgap III-nitride optoelectronic devices by Nnmerical Methods.