SI OXIDATION IN O2-N2 IN THE PRESENCE OF HCL
| dc.citation.epage | C103 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | C103 | en_US |
| dc.citation.volume | 128 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | LEE, MK | en_US |
| dc.contributor.author | LIU, SD | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.department | 奈米中心 | zh_TW |
| dc.contributor.department | Nano Facility Center | en_US |
| dc.date.accessioned | 2014-12-08T15:06:27Z | |
| dc.date.available | 2014-12-08T15:06:27Z | |
| dc.date.issued | 1981 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/5031 | |
| dc.identifier.wosnumber | WOS:A1981LF08600330 | |
| dc.language.iso | en_US | en_US |
| dc.title | SI OXIDATION IN O2-N2 IN THE PRESENCE OF HCL | en_US |
| dc.type | Meeting Abstract | en_US |
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