Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 23 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lee, Y. C. | en_US |
| dc.contributor.author | Lee, C. E. | en_US |
| dc.contributor.author | Lu, T. C. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Wang, S. C. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:12:22Z | |
| dc.date.available | 2014-12-08T15:12:22Z | |
| dc.date.issued | 2008-04-01 | en_US |
| dc.description.abstract | Small-scale GaN-based LEDs with a single electrode pad enjoying such properties as low cost, low series resistance, high efficiency and high yield were fabricated on a sapphire substrate by a novel and simple method. The devices present not only lower series resistance but higher light output power due to a specific n-contact design and better current spreading properties. Furthermore, higher ESD resistance (> -800 V at machine-mode operation) was demonstrated. The single-pad electrode of small-scale GaN-based LEDs has a chip size of 180 x 180 mu m(2), and showed a lower forward voltage of 3.15 V and 53.4% output power enhancement at 20 mA. | en_US |
| dc.identifier.doi | 10.1088/0268-1242/23/4/045013 | en_US |
| dc.identifier.issn | 0268-1242 | en_US |
| dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/23/4/045013 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9509 | |
| dc.identifier.wosnumber | WOS:000254386300013 | |
| dc.language.iso | en_US | en_US |
| dc.title | Small GaN-based light-emitting diodes with a single electrode pad fabricated on a sapphire substrate | en_US |
| dc.type | Article | en_US |