A STUDY OF THE INTERFACIAL LAYER OF AL AND AL(1-PERCENT SI)-SI CONTACTS USING A ZERO-LAYER ELLIPSOMETRY MODEL

Abstract

In this work, the interfacial layer of the Al-Si and Al(1% Si) Si contacting system annealed at different temperatures have been studied using ellipsometry incorporated with a zero-layer model. The results show that the thickness of the interfacial P+ layer between Al or Al(1% Si) and the Si-substrate increases with the annealing temperature and the thickness of the P+-layer of the Al(1% Si)-Si system is generally lower than that of the Al-Si system. Also, the fraction of Al in the interfacial layer decreases with the annealing temperature for the Al-Si system, but increases for the Al(1% Si)-Si system. The electrical measurements show that the interface of the Al(1% Si)-Si contact is more stable than that of the Al-Si contact.