Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties
| dc.citation.epage | en_US | |
| dc.citation.issue | 11 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | Lee, Chung-Yang | en_US |
| dc.contributor.author | Lu, Ming-Pei | en_US |
| dc.contributor.author | Liao, Kao-Feng | en_US |
| dc.contributor.author | Wu, Wen-Wei | en_US |
| dc.contributor.author | Chen, Lih-Juann | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:55Z | |
| dc.date.available | 2014-12-08T15:10:55Z | |
| dc.date.issued | 2008-09-15 | en_US |
| dc.description.abstract | Vertically well-aligned single crystal Ni(31)Si(12) nanowire (NW) arrays were epitaxially grown on Ni(31)Si(12) films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni(31)Si(12) NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni(31)Si(12) NWs were measured to be 51 mu Omega cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni(31)Si(12) NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. (C) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2981703 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2981703 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8347 | |
| dc.identifier.wosnumber | WOS:000259797900071 | |
| dc.language.iso | en_US | en_US |
| dc.title | Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties | en_US |
| dc.type | Article | en_US |