Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 93 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Tsai, Chih-Tsung | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Cheng, Yi-Li | en_US |
| dc.contributor.author | Huang, Fon-Shan | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:11:03Z | |
| dc.date.available | 2014-12-08T15:11:03Z | |
| dc.date.issued | 2008-08-04 | en_US |
| dc.description.abstract | In this work, the supercritical CO(2) fluid mixed with cosolvents is introduced to terminate the traps in electron-gun (e-gun) evaporation deposited silicon oxide (SiO(x)) film at 150 degrees C. After the proposed treatment, the SiO(x) film exhibits a lower leakage current and a resistive switching behavior that is controllable by applying proper voltage bias. The change in resistance is over 10(2) times and the retention time attains to 2x10(3) s. It is also discovered that the resistive switching behavior seemingly relates to the amount of traps. (C) 2008 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.2957655 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.2957655 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8477 | |
| dc.identifier.wosnumber | WOS:000258335900050 | |
| dc.language.iso | en_US | en_US |
| dc.title | Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications | en_US |
| dc.type | Article | en_US |