High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs

Abstract

Ultrathin Ta2O5 films have been deposited oil ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage Current characteristics of Ta2O5 films have been investi-ated in the temperature range of 27-200 degrees C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.