High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs
| dc.citation.epage | + | en_US |
| dc.citation.spage | 417 | en_US |
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Nandi, S. K. | en_US |
| dc.contributor.author | Tiwari, Jitendra N. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2017-04-21T06:49:08Z | |
| dc.date.available | 2017-04-21T06:49:08Z | |
| dc.date.issued | 2007 | en_US |
| dc.description.abstract | Ultrathin Ta2O5 films have been deposited oil ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage Current characteristics of Ta2O5 films have been investi-ated in the temperature range of 27-200 degrees C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature. | en_US |
| dc.identifier.isbn | 978-1-4244-1727-8 | en_US |
| dc.identifier.journal | PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135170 | |
| dc.identifier.wosnumber | WOS:000254274500101 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | High temperature electrical properties of ultra thin Ta2O5 films on ZnO/n-Si heterolayrs | en_US |
| dc.type | Proceedings Paper | en_US |
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