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THERMIONIC FIELD-EMISSION IN POLYCRYSTALLINE-SILICON FILMS

dc.citation.epageC396en_US
dc.citation.issue8en_US
dc.citation.spageC396en_US
dc.citation.volume127en_US
dc.citation.woscount0
dc.contributor.authorLU, NCCen_US
dc.contributor.authorGERZBERG, Len_US
dc.contributor.authorLU, CYen_US
dc.contributor.authorMEINDL, JDen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:30Z
dc.date.available2014-12-08T15:06:30Z
dc.date.issued1980en_US
dc.identifier.issn0013-4651en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/5075
dc.identifier.wosnumberWOS:A1980KE62400575
dc.language.isoen_USen_US
dc.titleTHERMIONIC FIELD-EMISSION IN POLYCRYSTALLINE-SILICON FILMSen_US
dc.typeMeeting Abstracten_US

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