A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS
| dc.citation.epage | 1063 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 1059 | en_US |
| dc.citation.volume | 38 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | SZE, JJ | en_US |
| dc.contributor.author | CHENG, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:24Z | |
| dc.date.available | 2014-12-08T15:03:24Z | |
| dc.date.issued | 1995-05-01 | en_US |
| dc.description.abstract | By reconsidering the effect of the penetration depth of the interface states, a new analytical expression of the interface index has been achieved to successfully explain the role of the semiconductor ionicity in the behavior of metal-Schottky contacts on semiconductors. The derived interface indices not only fit quite well with the previous experimental data but also exhibit a sharp transition from the Bardeen limit to the Schottky limit for semiconductor ionicity around 0.8, which agrees well with the experiment reports. | en_US |
| dc.identifier.doi | 10.1016/0038-1101(95)98675-S | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0038-1101(95)98675-S | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1937 | |
| dc.identifier.wosnumber | WOS:A1995QV34100017 | |
| dc.language.iso | en_US | en_US |
| dc.title | A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS | en_US |
| dc.type | Article | en_US |