A CHARGE-BASED CAPACITANCE MODEL OF SHORT-CHANNEL MOSFETS
| dc.citation.epage | 7 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 1 | en_US |
| dc.citation.volume | 8 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | CHUNG, SSS | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:53Z | |
| dc.date.available | 2014-12-08T15:05:53Z | |
| dc.date.issued | 1989-01-01 | en_US |
| dc.identifier.doi | 10.1109/43.21813 | en_US |
| dc.identifier.issn | 0278-0070 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/43.21813 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4414 | |
| dc.identifier.wosnumber | WOS:A1989R872500001 | |
| dc.language.iso | en_US | en_US |
| dc.title | A CHARGE-BASED CAPACITANCE MODEL OF SHORT-CHANNEL MOSFETS | en_US |
| dc.type | Article | en_US |