The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI
| dc.citation.epage | H845 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | H841 | en_US |
| dc.citation.volume | 156 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Lo, H. C. | en_US |
| dc.contributor.author | Luo, W. C. | en_US |
| dc.contributor.author | Lu, W. Y. | en_US |
| dc.contributor.author | Cheng, C. F. | en_US |
| dc.contributor.author | Chen, T. L. | en_US |
| dc.contributor.author | Lien, C. H. | en_US |
| dc.contributor.author | Fung, S. K. H. | en_US |
| dc.contributor.author | Wu, C. C. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:10:19Z | |
| dc.date.available | 2014-12-08T15:10:19Z | |
| dc.date.issued | 2009 | en_US |
| dc.description.abstract | Body-to-body leakage (BBL) current in a partially depleted silicon-on-insulator (PD-SOI) device is increased significantly as polyspacing (PS) is reduced in technology scaling. We found out that the BBL has a great impact to Vt variation. We have demonstrated that the BBL can be minimized drastically by implant optimization. The dependence of the BBL on silicon film thickness, e-SiGe structure, and dopant diffusivity is also discussed in this paper. The layout effect of the BBL current in PD-SOI devices has been characterized with different PSs, device widths, and polylengths. Finally, we have demonstrated that the BBL current can be reduced below junction leakage level. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3223971] All rights reserved. | en_US |
| dc.identifier.doi | 10.1149/1.3223971 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3223971 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7887 | |
| dc.identifier.wosnumber | WOS:000270457600065 | |
| dc.language.iso | en_US | en_US |
| dc.title | The Characteristics and Control of Body-to-Body Leakage Current in PD-SOI | en_US |
| dc.type | Article | en_US |