Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates
| dc.citation.epage | 3009 | en_US |
| dc.citation.issue | 16 | en_US |
| dc.citation.spage | 3007 | en_US |
| dc.citation.volume | 81 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Lin, SD | en_US |
| dc.contributor.author | Lee, CP | en_US |
| dc.contributor.author | Hsieh, WH | en_US |
| dc.contributor.author | Suen, YW | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:50Z | |
| dc.date.available | 2014-12-08T15:41:50Z | |
| dc.date.issued | 2002-10-14 | en_US |
| dc.description.abstract | The growth of GaAs antiwires in the In0.53Ga0.47As matrix on InP substrate has been investigated. The periodic, wire-like structure was obtained when a proper amount of GaAs was deposited. The grown antiwires have a height about 1.2-2.0 nm and a period about 23 nm. Using an In0.53Ga0.47As/In0.52Al0.48As modulation-doped structure, the effect of the GaAs antiwires on the two-dimensional electron gas mobility was investigated. For the sample with antiwires near the two-dimensional channel, a significant anisotropy in low temperature mobility was observed. (C) 2002 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1515878 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1515878 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28455 | |
| dc.identifier.wosnumber | WOS:000178460500031 | |
| dc.language.iso | en_US | en_US |
| dc.title | Self-assembled GaAs antiwires in In0.53Ga0.47As matrix on (100) InP substrates | en_US |
| dc.type | Article | en_US |