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Nanostructured thin films for anti-reflection applications

dc.citation.epage5198en_US
dc.citation.issue15en_US
dc.citation.spage5194en_US
dc.citation.volume519en_US
dc.citation.woscount9
dc.contributor.authorChen, J. Y.en_US
dc.contributor.authorSun, K. W.en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.date.accessioned2014-12-08T15:11:31Z
dc.date.available2014-12-08T15:11:31Z
dc.date.issued2011-05-31en_US
dc.description.abstractAnti-reflection (AR) thin films composed of ordered arrays of tapered nanostructures on the surface of PMMA and silicon, through the hot-embossing nanoimprint of polymer using molds prepared from e-beam lithography and hydrothermally grown ZnO nanorod arrays. The use of PMMA and ZnO nanorod thin films allows the formation of anti-reflection structures on a curved or flat surface to effectively suppress the reflectance of the incident light. It provides a simple and low-cost means for large-scale use in the production of AR layers for improving optical and optoelectronic device performance, such as solar cells and photodetectors. A drastic reduction in the reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells by over 30% using the nanostructured AR layer was validated. (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2011.01.110en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.01.110en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/8832
dc.identifier.wosnumberWOS:000292471400112
dc.language.isoen_USen_US
dc.subjectNanoimprinten_US
dc.subjectAnti-reflectionen_US
dc.subjectSub-wavelength structureen_US
dc.titleNanostructured thin films for anti-reflection applicationsen_US
dc.typeArticleen_US

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