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CURRENT TRANSPORT ACROSS A GRAIN-BOUNDARY IN POLYCRYSTALLINE SEMICONDUCTORS

dc.citation.epage557en_US
dc.citation.issue6en_US
dc.citation.spage549en_US
dc.citation.volume26en_US
dc.citation.woscount18
dc.contributor.authorLU, CYen_US
dc.contributor.authorLU, NCCen_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.date.accessioned2014-12-08T15:06:22Z
dc.date.available2014-12-08T15:06:22Z
dc.date.issued1983en_US
dc.identifier.issn0038-1101en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/4936
dc.identifier.wosnumberWOS:A1983QR11500006
dc.language.isoen_USen_US
dc.titleCURRENT TRANSPORT ACROSS A GRAIN-BOUNDARY IN POLYCRYSTALLINE SEMICONDUCTORSen_US
dc.typeArticleen_US

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