DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALING
| dc.citation.epage | 1937 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1931 | en_US |
| dc.citation.volume | 141 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | CHEN, BS | en_US |
| dc.contributor.author | CHEN, MC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:54Z | |
| dc.date.available | 2014-12-08T15:03:54Z | |
| dc.date.issued | 1994-07-01 | en_US |
| dc.description.abstract | The dielectric properties, which are highlighted on electrical characteristics, of alpha-Si/CO/SiO2/Si Structure after thermal annealing have been studied. A one-step high temperature (greater-than-or-equal-to 700-degrees-C) annealing process is found to deteriorate considerably the characteristics of the masking oxide. The tetraethylorthosilicate oxide needs a high-temperature preanneal prior to the self-aligned silicided (SALICIDE) process in order to prevent crack and pit formation and severe electrical degradation during silicidation annealing. A two-step annealing process with the first annealing performed at 550-degrees-C for 30 min has proved to be a trustworthy salicide process without affecting the dielectric properties of masking oxide. | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2429 | |
| dc.identifier.wosnumber | WOS:A1994NX19600045 | |
| dc.language.iso | en_US | en_US |
| dc.title | DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALING | en_US |
| dc.type | Article | en_US |