Preheating-temperature effect on structural and photoluminescent properties of sol-gel derived ZnO thin films
| dc.citation.epage | 115 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 111 | en_US |
| dc.citation.volume | 148 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | Chia, C. H. | en_US |
| dc.contributor.author | Tsai, W. C. | en_US |
| dc.contributor.author | Chou, W. C. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:36:25Z | |
| dc.date.available | 2014-12-08T15:36:25Z | |
| dc.date.issued | 2014-04-01 | en_US |
| dc.description.abstract | We investigated he evolution of structural and low-temperature photoluminescence properties of sol-gel derived ZnO thin films, as a function of pre-heating temperature between 300 degrees C and 600 degrees C. The pre-heating crystallization plays an important role in the lineshape of PL spectra. The increase in pre-heating temperature enables rearrangement of atoms at the pre-heating stage, leading to c-axis oriented growth of films, modification in lineshape of impurity-detect emission, and reduction of deep-level emission intensity. (C) 2013 Elsevier B.V. All rights reserved | en_US |
| dc.identifier.doi | 10.1016/j.jlumin.2013.12.006 | en_US |
| dc.identifier.issn | 0022-2313 | en_US |
| dc.identifier.journal | JOURNAL OF LUMINESCENCE | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jlumin.2013.12.006 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/24754 | |
| dc.identifier.wosnumber | WOS:000337516000019 | |
| dc.language.iso | en_US | en_US |
| dc.subject | ZnO | en_US |
| dc.subject | Sol-gel | en_US |
| dc.subject | Photoluminescence | en_US |
| dc.subject | Exciton | en_US |
| dc.title | Preheating-temperature effect on structural and photoluminescent properties of sol-gel derived ZnO thin films | en_US |
| dc.type | Article | en_US |