HIGH-BARRIER PT/AL/N-INP DIODE
| dc.citation.epage | 925 | en_US |
| dc.citation.issue | 11 | en_US |
| dc.citation.spage | 924 | en_US |
| dc.citation.volume | 31 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | HUANG, WC | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:03:22Z | |
| dc.date.available | 2014-12-08T15:03:22Z | |
| dc.date.issued | 1995-05-25 | en_US |
| dc.description.abstract | A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface. | en_US |
| dc.identifier.doi | 10.1049/el:19950614 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:19950614 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1915 | |
| dc.identifier.wosnumber | WOS:A1995RC65600060 | |
| dc.language.iso | en_US | en_US |
| dc.subject | SCHOTTKY-BARRIER DIODES | en_US |
| dc.subject | INDIUM PHOSPHIDE | en_US |
| dc.title | HIGH-BARRIER PT/AL/N-INP DIODE | en_US |
| dc.type | Article | en_US |