EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD
| dc.citation.epage | 8060 | en_US |
| dc.citation.issue | 15 | en_US |
| dc.citation.spage | 8054 | en_US |
| dc.citation.volume | 44 | en_US |
| dc.citation.woscount | 13 | en_US |
| dc.contributor.author | CHUU, DS | en_US |
| dc.contributor.author | SHIH, YT | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2019-04-03T06:37:46Z | |
| dc.date.available | 2019-04-03T06:37:46Z | |
| dc.date.issued | 1991-10-15 | en_US |
| dc.description.abstract | The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.44.8054 | en_US |
| dc.identifier.issn | 2469-9950 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.44.8054 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3657 | |
| dc.identifier.wosnumber | WOS:A1991GK72800030 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD | en_US |
| dc.type | Article | en_US |