Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004)
| dc.citation.epage | 4815 | en_US |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | 4815 | en_US |
| dc.citation.volume | 84 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, TC | en_US |
| dc.contributor.author | Yan, ST | en_US |
| dc.contributor.author | Yang, FM | en_US |
| dc.contributor.author | Liu, PT | en_US |
| dc.contributor.author | Sze, SM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:58Z | |
| dc.date.available | 2014-12-08T15:38:58Z | |
| dc.date.issued | 2004-06-07 | en_US |
| dc.identifier.doi | 10.1063/1.1761633 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1761633 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26679 | |
| dc.identifier.wosnumber | WOS:000221656900075 | |
| dc.language.iso | en_US | en_US |
| dc.title | Memory effect of oxide/SiC : O/oxide sandwiched structures" (vol 84, pg 2094, 2004) | en_US |
| dc.type | Correction | en_US |