Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations
| dc.citation.epage | 0 | en_US |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 75 | en_US |
| dc.citation.woscount | 37 | en_US |
| dc.contributor.author | Lu, Chi-Ken | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2019-04-03T06:44:45Z | |
| dc.date.available | 2019-04-03T06:44:45Z | |
| dc.date.issued | 2007-06-01 | en_US |
| dc.description.abstract | The sensitive effect of O-2 adsorption on the electronic properties of organic semiconductors is investigated by band structure calculation. O-2 can actually p-dope the host materials even without illumination, i.e., a ground state property, in the circumstance of saturated coverage. Due to hybridization between O-2 and polymer, Fermi level of the oxygenated system is pinned at the nearly half-filled oxygen band and overlap with host valence band. The doping depends critically on the ionization potential. Each O-2 can dope more than 0.1 hole in dark and a full charge-transfer excitation around 2.3 eV photon energy is predicted. | en_US |
| dc.identifier.doi | 10.1103/PhysRevB.75.235206 | en_US |
| dc.identifier.issn | 1098-0121 | en_US |
| dc.identifier.journal | PHYSICAL REVIEW B | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.75.235206 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10707 | |
| dc.identifier.wosnumber | WOS:000247624900070 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Hole doping by molecular oxygen in organic semiconductors: Band-structure calculations | en_US |
| dc.type | Article | en_US |