Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals
| dc.citation.epage | 0 | en_US |
| dc.citation.spage | 0 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 13 | en_US |
| dc.contributor.author | Shih, Chen Wei | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.author | Lu, Chun Fu | en_US |
| dc.contributor.author | Su, Wei Fang | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2019-04-03T06:44:50Z | |
| dc.date.available | 2019-04-03T06:44:50Z | |
| dc.date.issued | 2016-01-08 | en_US |
| dc.description.abstract | High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high I-ON/I-OFF of 2.3 x 10(7), small 110 mV/dec sub-threshold slope, and a low V-D of 2.5V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals. | en_US |
| dc.identifier.doi | 10.1038/srep19023 | en_US |
| dc.identifier.issn | 2045-2322 | en_US |
| dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1038/srep19023 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/129674 | |
| dc.identifier.wosnumber | WOS:000368664400002 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Remarkably high mobility ultrathin-film metal-oxide transistor with strongly overlapped orbitals | en_US |
| dc.type | Article | en_US |