THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD
| dc.citation.epage | L2433 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | L2431 | en_US |
| dc.citation.volume | 27 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | LIN, W | en_US |
| dc.contributor.author | LEI, MD | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | HSU, WC | en_US |
| dc.contributor.author | DI, LB | en_US |
| dc.contributor.author | KAI, F | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:56Z | |
| dc.date.available | 2014-12-08T15:05:56Z | |
| dc.date.issued | 1988-12-01 | en_US |
| dc.identifier.issn | en_US | |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4467 | |
| dc.identifier.wosnumber | WOS:A1988R754300060 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVD | en_US |
| dc.type | Article | en_US |
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