Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Lo, Shun-Tsung | en_US |
| dc.contributor.author | Chuang, Chiashain | en_US |
| dc.contributor.author | Lin, Sheng-Di | en_US |
| dc.contributor.author | Chen, Kuang Yao | en_US |
| dc.contributor.author | Liang, Chi-Te | en_US |
| dc.contributor.author | Lin, Shih-Wei | en_US |
| dc.contributor.author | Wu, Jau-Yang | en_US |
| dc.contributor.author | Yeh, Mao-Rong | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:37:47Z | |
| dc.date.available | 2014-12-08T15:37:47Z | |
| dc.date.issued | 2011 | en_US |
| dc.description.abstract | Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also, phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T, we show the importance of surface scattering in such a nanoscale film. | en_US |
| dc.identifier.doi | 10.1186/1556-276X-6-102 | en_US |
| dc.identifier.issn | 1931-7573 | en_US |
| dc.identifier.journal | NANOSCALE RESEARCH LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1186/1556-276X-6-102 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/25983 | |
| dc.identifier.wosnumber | WOS:000290525700041 | |
| dc.language.iso | en_US | en_US |
| dc.title | Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy | en_US |
| dc.type | Article | en_US |