AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS
| dc.citation.epage | 1702 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 1691 | en_US |
| dc.citation.volume | 36 | en_US |
| dc.citation.woscount | 18 | |
| dc.contributor.author | CHUNG, SSS | en_US |
| dc.contributor.author | LIN, TS | en_US |
| dc.contributor.author | CHEN, YG | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:05:46Z | |
| dc.date.available | 2014-12-08T15:05:46Z | |
| dc.date.issued | 1989-09-01 | en_US |
| dc.identifier.doi | 10.1109/16.34231 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.34231 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4298 | |
| dc.identifier.wosnumber | WOS:A1989AL12900021 | |
| dc.language.iso | en_US | en_US |
| dc.title | AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS | en_US |
| dc.type | Article | en_US |