Impedance Spectroscopy of CaCu(3)Ti(4)O(12) Films Showing Resistive Switching
| dc.citation.epage | H470 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | H466 | en_US |
| dc.citation.volume | 156 | en_US |
| dc.contributor.author | Shen, Yu-Shu | en_US |
| dc.contributor.author | Ho, Chia-Cheng | en_US |
| dc.contributor.author | Chiou, Bi-Shiou | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Innovative Packaging Research Center | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Innovative Packaging Research Center | en_US |
| dc.date.accessioned | 2014-12-08T15:10:19Z | |
| dc.date.available | 2014-12-08T15:10:19Z | |
| dc.date.issued | 2009-01-01 | en_US |
| dc.description.abstract | CaCu(3)Ti(4)O(12) (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored. | en_US |
| dc.identifier.doi | 10.1149/1.3111882 | en_US |
| dc.identifier.issn | 0013-4651 | en_US |
| dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3111882 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7883 | |
| dc.language.iso | en_US | en_US |
| dc.title | Impedance Spectroscopy of CaCu(3)Ti(4)O(12) Films Showing Resistive Switching | en_US |
| dc.type | Article | en_US |
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