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Effect of ultraviolet light exposure on a HfO(x) RRAM device

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dc.citation.epage7463en_US
dc.citation.issue24en_US
dc.citation.spage7460en_US
dc.citation.volume518en_US
dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChan, Yi-Chunen_US
dc.contributor.authorKuo, Chun-Chihen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:48:11Z
dc.date.available2014-12-08T15:48:11Z
dc.date.issued2010-10-01en_US
dc.description.abstractThis paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO(x)/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO(x)/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO(2) layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.tsf.2010.05.024en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.05.024en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/32126
dc.language.isoen_USen_US
dc.titleEffect of ultraviolet light exposure on a HfO(x) RRAM deviceen_US
dc.typeArticleen_US

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