FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS
| dc.citation.epage | 53 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 49 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 9 | |
| dc.contributor.author | HSU, SL | en_US |
| dc.contributor.author | LIU, LM | en_US |
| dc.contributor.author | FANG, CH | en_US |
| dc.contributor.author | YING, SL | en_US |
| dc.contributor.author | CHEN, TL | en_US |
| dc.contributor.author | LIN, MS | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:41Z | |
| dc.date.available | 2014-12-08T15:04:41Z | |
| dc.date.issued | 1993-01-01 | en_US |
| dc.description.abstract | Severe field inversion has been observed in the circuits fabricated by the CMOS double metal process using PETEOS/inorganic SOG/PEOX as the inter-metal dielectrics and PEOX/PECVD nitride as the passivation layer. We have performed detailed studies to conclude that the field inversion is caused by the interaction between PETEOS and non-carbon-based SOG, triggered by the H+ released from PECVD nitride during the sintering. No field inversion is observed when PEOX/inorganic SOG/PEOX is used as the inter-metal dielectrics. The effect of field inversion on the circuit yield is also discussed. | en_US |
| dc.identifier.doi | 10.1109/16.249423 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.249423 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3187 | |
| dc.identifier.wosnumber | WOS:A1993KC14400008 | |
| dc.language.iso | en_US | en_US |
| dc.title | FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS | en_US |
| dc.type | Article | en_US |