A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
| dc.citation.epage | 2362 | en_US |
| dc.citation.issue | 12 | en_US |
| dc.citation.spage | 2361 | en_US |
| dc.citation.volume | 40 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | LIN, KC | en_US |
| dc.contributor.author | HSIN, YM | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | CHANG, EY | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:15Z | |
| dc.date.available | 2014-12-08T15:04:15Z | |
| dc.date.issued | 1993-12-01 | en_US |
| dc.description.abstract | A high band-gap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt,Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10(-2) times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 mu m gate length GaInP/InP MESFET. | en_US |
| dc.identifier.doi | 10.1109/16.249488 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/16.249488 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2753 | |
| dc.identifier.wosnumber | WOS:A1993MP36300030 | |
| dc.language.iso | en_US | en_US |
| dc.title | A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE | en_US |
| dc.type | Note | en_US |