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Influence of thin metal base thickness on the performance of CuPc vertical organic triodes

dc.citation.epageen_US
dc.citation.issue15en_US
dc.citation.volume90en_US
dc.citation.woscount14
dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorYang, Chuan-Yien_US
dc.contributor.authorChuang, You-Cheen_US
dc.contributor.authorOu, Chun-Weien_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChan, Yi-Jenen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:14:17Z
dc.date.available2014-12-08T15:14:17Z
dc.date.issued2007-04-09en_US
dc.description.abstractIn this letter, the characteristics of vertical organic triodes fabricated by using two copper phthalocyanine (CuPc) back-to-back Schottky diodes with different metal base thicknesses are reported. The vertical organic triodes exhibit pronounced saturation regions in the output current-voltage characteristics. The common-emitter current gain reduces with increasing the Al base thickness due to the increase of recombination current at the base end resulted from the reduction of opening voids in the Al metal film. The common-emitter current gain of the device with 4.5 nm thick Al base reaches 1.9 at V-CE=-6 V and J(B)=2.5 mA/cm(2). (c) 2007 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2722623en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2722623en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/10919
dc.identifier.wosnumberWOS:000245690700112
dc.language.isoen_USen_US
dc.titleInfluence of thin metal base thickness on the performance of CuPc vertical organic triodesen_US
dc.typeArticleen_US

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