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12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫三:利用CVD法成長BST薄膜與特性分析(II)

dc.contributor.author曾俊元en_US
dc.contributor.authorTSEUNG-YUENTSENGen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
dc.date.accessioned2014-12-13T10:44:31Z
dc.date.available2014-12-13T10:44:31Z
dc.date.issued2000en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC89-2212-E009-081zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=548932&docId=101309en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/100039
dc.language.isozh_TWen_US
dc.title12吋矽晶圓半導體CVD製程設備及BST介電薄膜成長研究---子計畫三:利用CVD法成長BST薄膜與特性分析(II)zh_TW
dc.titleGrowth and Characterizations of CVD BST Thin Films(II)en_US
dc.typePlanen_US

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