GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES
| dc.citation.epage | 2698 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 2695 | en_US |
| dc.citation.volume | 75 | en_US |
| dc.citation.woscount | 2 | |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:05Z | |
| dc.date.available | 2014-12-08T15:04:05Z | |
| dc.date.issued | 1994-03-01 | en_US |
| dc.description.abstract | We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--delta(p+)-n--p+-n--delta(p+)-n--n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of approximately 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac. | en_US |
| dc.identifier.doi | 10.1063/1.357020 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.357020 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2589 | |
| dc.identifier.wosnumber | WOS:A1994MY99500060 | |
| dc.language.iso | en_US | en_US |
| dc.title | GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES | en_US |
| dc.type | Article | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: