Characteristics of poly-Si nanowire transistors with multiple-gate configurations
| dc.citation.epage | 102 | en_US |
| dc.citation.spage | 101 | en_US |
| dc.contributor.author | Hsu, Hsing-Hui | en_US |
| dc.contributor.author | Lin, Homg-Chih | en_US |
| dc.contributor.author | Lee, Ko-Hui | en_US |
| dc.contributor.author | Huang, Jian-Fu | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:04:53Z | |
| dc.date.available | 2014-12-08T15:04:53Z | |
| dc.date.issued | 2008 | en_US |
| dc.identifier.doi | 10.1109/VTSA.2008.4530818 | en_US |
| dc.identifier.isbn | 978-1-4244-1614-1 | en_US |
| dc.identifier.journal | 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/VTSA.2008.4530818 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/3408 | |
| dc.identifier.wosnumber | WOS:000256564900047 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of poly-Si nanowire transistors with multiple-gate configurations | en_US |
| dc.type | Proceedings Paper | en_US |