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Thermomigration in Pb-free SnAg solder joint under alternating current stressing

dc.citation.epageen_US
dc.citation.issue9en_US
dc.citation.volume94en_US
dc.citation.woscount24
dc.contributor.authorHsiao, Hsiang-Yaoen_US
dc.contributor.authorChen, Chihen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:09:48Z
dc.date.available2014-12-08T15:09:48Z
dc.date.issued2009-03-02en_US
dc.description.abstractLead-free solders have been adopted by the microelectronics industry. However, their thermomigration behaviors are unclear. Thermomigration in eutectic SnAg3.5 solder joints was investigated using an alternating current (ac) of 0.57 A at 100 degrees C. The ac eliminates the electromigration effect and creates a thermal gradient of 2829 degrees C/cm, facilitating the study of thermomigration. Arrays of tiny markers fabricated by a focused ion beam are employed to measure the thermomigration rate. It is found that Sn atoms migrated toward the hot end. The thermomigration flux and molar heat of transport are measured to be 5.0x10(12) atoms/cm(2) and 1.36 kJ/mole, respectively.en_US
dc.identifier.doi10.1063/1.3089872en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3089872en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7507
dc.identifier.wosnumberWOS:000264523100041
dc.language.isoen_USen_US
dc.subjectelectronics packagingen_US
dc.subjectfocused ion beam technologyen_US
dc.subjectself-diffusionen_US
dc.subjectsilver alloysen_US
dc.subjectsoldersen_US
dc.subjectthermal diffusionen_US
dc.subjecttin alloysen_US
dc.titleThermomigration in Pb-free SnAg solder joint under alternating current stressingen_US
dc.typeArticleen_US

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