Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
| dc.citation.epage | en_US | |
| dc.citation.issue | 22 | en_US |
| dc.citation.volume | 86 | en_US |
| dc.citation.woscount | 30 | |
| dc.contributor.author | Lai, CS | en_US |
| dc.contributor.author | Wu, WC | en_US |
| dc.contributor.author | Wang, JC | en_US |
| dc.contributor.author | Chao, T | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.date.accessioned | 2014-12-08T15:19:05Z | |
| dc.date.available | 2014-12-08T15:19:05Z | |
| dc.date.issued | 2005-05-30 | en_US |
| dc.description.abstract | In this paper, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization. TaN-HfO2-p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra. (c) 2005 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1944230 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1944230 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13694 | |
| dc.identifier.wosnumber | WOS:000229590100057 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate | en_US |
| dc.type | Article | en_US |