IMPROVED IV-CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS WITH NOVEL DUAL-BUFFER DRAIN STRUCTURE

Abstract

ON/OFF current ratio of poly-Si TFTs has been improved by using a novel structure called the dual-buff er drain (DBD). The new DBD TFT not only reduces the anomalous off-current, but also maintains a high on-current. It mainly combines features of the double-gate and the field-induced drain structures, so that owns advantages of low electric field near the drain junction and good drain junction characteristics. Furthermore, it will be shown that the DBD TFT is superior in off-current stability to the FID TFT. Finally, we will discuss high voltage operation for the DBD TFT.