Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
| dc.citation.epage | 2444 | en_US |
| dc.citation.issue | 8 | en_US |
| dc.citation.spage | 2439 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Trinh, Hai-Dang | en_US |
| dc.contributor.author | Lin, Yueh-Chin | en_US |
| dc.contributor.author | Kuo, Chien-I | en_US |
| dc.contributor.author | Chang, Edward Yi | en_US |
| dc.contributor.author | Hong-Quan Nguyen | en_US |
| dc.contributor.author | Wong, Yuen-Yee | en_US |
| dc.contributor.author | Yu, Chih-Chieh | en_US |
| dc.contributor.author | Chen, Chi-Ming | en_US |
| dc.contributor.author | Chang, Chia-Yuan | en_US |
| dc.contributor.author | Wu, Jyun-Yi | en_US |
| dc.contributor.author | Chiu, Han-Chin | en_US |
| dc.contributor.author | Yu, Terrence | en_US |
| dc.contributor.author | Chang, Hui-Cheng | en_US |
| dc.contributor.author | Tsai, Joseph | en_US |
| dc.contributor.author | Hwang, David | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:31:04Z | |
| dc.date.available | 2014-12-08T15:31:04Z | |
| dc.date.issued | 2013-08-01 | en_US |
| dc.description.abstract | The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy. | en_US |
| dc.identifier.doi | 10.1007/s11664-013-2616-x | en_US |
| dc.identifier.issn | 0361-5235 | en_US |
| dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s11664-013-2616-x | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22145 | |
| dc.identifier.wosnumber | WOS:000322029800003 | |
| dc.language.iso | en_US | en_US |
| dc.subject | ALD Al2O3 | en_US |
| dc.subject | surface treatment | en_US |
| dc.subject | InGaAs | en_US |
| dc.subject | InAs | en_US |
| dc.subject | MOSCAPs | en_US |
| dc.title | Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures | en_US |
| dc.type | Article | en_US |