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Fluorescence signals of quantum dots influenced by spatially controlled array structures

dc.citation.epageen_US
dc.citation.issue41en_US
dc.citation.volume20en_US
dc.citation.woscount0
dc.contributor.authorChou, J. W.en_US
dc.contributor.authorLin, K. C.en_US
dc.contributor.authorTang, Y. T.en_US
dc.contributor.authorHsueh, F. K.en_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorChen, Y. N.en_US
dc.contributor.authorYuan, C. T.en_US
dc.contributor.authorShih, Hsun-Chuanen_US
dc.contributor.authorFan, W. C.en_US
dc.contributor.authorLin, M. C.en_US
dc.contributor.authorChou, W. C.en_US
dc.contributor.authorChuu, D. S.en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.date.accessioned2014-12-08T15:08:32Z
dc.date.available2014-12-08T15:08:32Z
dc.date.issued2009-10-14en_US
dc.description.abstractFluorescence signals of quantum dots (QDs) influenced by different array structures of gold-coated silicon nanorods (SiNRs) were investigated via experimental observations and two-dimensional (2D) finite element method (FEM) simulations. On the densest gold-coated SiNRs array structure, the highest QD fluorescence quenching rates were observed and on the sparsest array structure, the highest QD fluorescence enhancement rates were observed. By developing a new technique which obtains the optical image of the array structures without losing information about the QD locations, we were able to further investigate how the QD fluorescence is influenced by spatially controlled array structures.en_US
dc.identifier.doi10.1088/0957-4484/20/41/415201en_US
dc.identifier.issn0957-4484en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/20/41/415201en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/6565
dc.identifier.wosnumberWOS:000269930100005
dc.language.isoen_USen_US
dc.titleFluorescence signals of quantum dots influenced by spatially controlled array structuresen_US
dc.typeArticleen_US

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